Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
BD 5.665
BD 0.566 Each (In a Pack of 10) (Exc. Vat)
BD 6.231
BD 0.623 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 5.665
BD 0.566 Each (In a Pack of 10) (Exc. Vat)
BD 6.231
BD 0.623 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.566 | BD 5.665 |
| 100 - 240 | BD 0.539 | BD 5.390 |
| 250 - 490 | BD 0.451 | BD 4.510 |
| 500 - 990 | BD 0.429 | BD 4.290 |
| 1000+ | BD 0.407 | BD 4.070 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products