Promotional Code

Use promotional code RSBAHEXTRA5 and get extra 5% off on the price of all products | Payment Options: Debit or Credit Card, Wire Transfer, Cash or Cheque

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3

RS Stock No.: 814-1225Brand: VishayManufacturers Part No.: SIA517DJ-T1-GE3
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 4.5 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ, 170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

2.15mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.15mm

Typical Gate Charge @ Vgs

13.1 nC @ 8 V, 9.7 nC @ 8 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

BD 4.950

BD 0.248 Each (In a Pack of 20) (Exc. Vat)

BD 5.445

BD 0.273 Each (In a Pack of 20) (inc. VAT)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Select packaging type

BD 4.950

BD 0.248 Each (In a Pack of 20) (Exc. Vat)

BD 5.445

BD 0.273 Each (In a Pack of 20) (inc. VAT)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
20 - 180BD 0.248BD 4.950
200 - 480BD 0.214BD 4.290
500 - 980BD 0.182BD 3.630
1000 - 1980BD 0.170BD 3.410
2000+BD 0.148BD 2.970

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 4.5 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ, 170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

2.15mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.15mm

Typical Gate Charge @ Vgs

13.1 nC @ 8 V, 9.7 nC @ 8 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more