Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount
Stock information temporarily unavailable.
BD 46.211
BD 46.211 Each (Exc. Vat)
BD 50.832
BD 50.832 Each (inc. VAT)
Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Select packaging type
Standard
1
BD 46.211
BD 46.211 Each (Exc. Vat)
BD 50.832
BD 50.832 Each (inc. VAT)
Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 4 | BD 46.211 |
5 - 9 | BD 44.490 |
10 - 49 | BD 43.170 |
50+ | BD 42.960 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount