Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ P7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.45 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
BD 38.775
BD 0.776 Each (In a Tube of 50) (Exc. Vat)
BD 42.653
BD 0.854 Each (In a Tube of 50) (inc. VAT)
50
BD 38.775
BD 0.776 Each (In a Tube of 50) (Exc. Vat)
BD 42.653
BD 0.854 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.776 | BD 38.775 |
100 - 200 | BD 0.622 | BD 31.075 |
250 - 450 | BD 0.588 | BD 29.425 |
500 - 950 | BD 0.561 | BD 28.050 |
1000+ | BD 0.528 | BD 26.400 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ P7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.45 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si