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Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1

RS Stock No.: 262-5863Brand: InfineonManufacturers Part No.: IPD028N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 3.520

BD 0.704 Each (In a Pack of 5) (Exc. Vat)

BD 3.872

BD 0.774 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.520
10BD 7.040
15BD 10.560
20BD 14.080
25BD 17.600
30BD 21.120
35BD 24.640
40BD 28.160
45BD 31.680
50BD 29.150
55BD 32.065
60BD 34.980
65BD 37.895
70BD 40.810
75BD 43.725

BD 3.520

BD 0.704 Each (In a Pack of 5) (Exc. Vat)

BD 3.872

BD 0.774 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.520
10BD 7.040
15BD 10.560
20BD 14.080
25BD 17.600
30BD 21.120
35BD 24.640
40BD 28.160
45BD 31.680
50BD 29.150
55BD 32.065
60BD 34.980
65BD 37.895
70BD 40.810
75BD 43.725

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45BD 0.704BD 3.520
50 - 120BD 0.583BD 2.915
125 - 245BD 0.544BD 2.722
250 - 495BD 0.512BD 2.558
500+BD 0.396BD 1.980

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more