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Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1

RS Stock No.: 262-5867Brand: InfineonManufacturers Part No.: IPD038N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 3.630

BD 0.363 Each (In a Pack of 10) (Exc. Vat)

BD 3.993

BD 0.399 Each (In a Pack of 10) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 3.630
20BD 7.260
30BD 10.890
40BD 14.520
50BD 18.150
60BD 21.780
70BD 25.410
80BD 29.040
90BD 32.670
100BD 34.650
110BD 38.115
120BD 41.580
130BD 45.045
140BD 48.510
150BD 51.975

BD 3.630

BD 0.363 Each (In a Pack of 10) (Exc. Vat)

BD 3.993

BD 0.399 Each (In a Pack of 10) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 3.630
20BD 7.260
30BD 10.890
40BD 14.520
50BD 18.150
60BD 21.780
70BD 25.410
80BD 29.040
90BD 32.670
100BD 34.650
110BD 38.115
120BD 41.580
130BD 45.045
140BD 48.510
150BD 51.975

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 90BD 0.363BD 3.630
100 - 240BD 0.346BD 3.465
250 - 490BD 0.336BD 3.355
500 - 990BD 0.330BD 3.300
1000+BD 0.214BD 2.145

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more