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Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

RS Stock No.: 218-3044Brand: InfineonManufacturers Part No.: IPD50N06S4L12ATMA2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

BD 420.000

BD 0.168 Each (On a Reel of 2500) (Exc. Vat)

BD 462.000

BD 0.185 Each (On a Reel of 2500) (inc. VAT)

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

BD 420.000

BD 0.168 Each (On a Reel of 2500) (Exc. Vat)

BD 462.000

BD 0.185 Each (On a Reel of 2500) (inc. VAT)

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more