Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
BD 3.518
BD 0.704 Each (In a Pack of 5) (Exc. Vat)
BD 3.870
BD 0.774 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.518
BD 0.704 Each (In a Pack of 5) (Exc. Vat)
BD 3.870
BD 0.774 Each (In a Pack of 5) (inc. VAT)
Standard
5
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.