Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ P7
Package Type
IPAK SL (TO-251 SL)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
BD 11.550
BD 0.154 Each (In a Tube of 75) (Exc. Vat)
BD 12.705
BD 0.169 Each (In a Tube of 75) (inc. VAT)
75
BD 11.550
BD 0.154 Each (In a Tube of 75) (Exc. Vat)
BD 12.705
BD 0.169 Each (In a Tube of 75) (inc. VAT)
75
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
75 - 75 | BD 0.154 | BD 11.550 |
150 - 300 | BD 0.121 | BD 9.075 |
375 - 675 | BD 0.121 | BD 9.075 |
750 - 1800 | BD 0.116 | BD 8.662 |
1875+ | BD 0.116 | BD 8.662 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ P7
Package Type
IPAK SL (TO-251 SL)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si