Technical Document
Specifications
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Width
9.2mm
Transistor Material
Si
Height
4.5mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 5.649
BD 2.824 Each (In a Pack of 2) (Exc. Vat)
BD 6.214
BD 3.106 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 5.649
BD 2.824 Each (In a Pack of 2) (Exc. Vat)
BD 6.214
BD 3.106 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
2 - 6 | BD 2.824 | BD 5.649 |
8 - 38 | BD 2.740 | BD 5.481 |
40 - 198 | BD 2.678 | BD 5.355 |
200 - 398 | BD 2.625 | BD 5.250 |
400+ | BD 2.599 | BD 5.198 |
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Width
9.2mm
Transistor Material
Si
Height
4.5mm
Product details