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onsemi SiC Power SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 NTH4L015N065SC1

RS Stock No.: 229-6458Brand: onsemiManufacturers Part No.: NTH4L015N065SC1
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

142 A

Maximum Drain Source Voltage

650 V

Series

SiC Power

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.012 Ω

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 12.634

BD 12.634 Each (Exc. Vat)

BD 13.897

BD 13.897 Each (inc. VAT)

onsemi SiC Power SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 NTH4L015N065SC1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 12.634
2BD 25.267
3BD 37.900
4BD 50.534
5BD 63.168
6BD 75.801
7BD 88.434
8BD 101.068
9BD 113.702
10BD 111.375
11BD 122.512
12BD 133.650
13BD 144.788
14BD 155.925
15BD 167.062

BD 12.634

BD 12.634 Each (Exc. Vat)

BD 13.897

BD 13.897 Each (inc. VAT)

onsemi SiC Power SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 NTH4L015N065SC1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 12.634
2BD 25.267
3BD 37.900
4BD 50.534
5BD 63.168
6BD 75.801
7BD 88.434
8BD 101.068
9BD 113.702
10BD 111.375
11BD 122.512
12BD 133.650
13BD 144.788
14BD 155.925
15BD 167.062

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9BD 12.634
10 - 99BD 11.138
100+BD 9.878

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

142 A

Maximum Drain Source Voltage

650 V

Series

SiC Power

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.012 Ω

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more