onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.12mm
Country of Origin
China
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BD 117.600
BD 2.352 Each (In a Tube of 50) (Exc. Vat)
BD 129.360
BD 2.587 Each (In a Tube of 50) (inc. VAT)
50
BD 117.600
BD 2.352 Each (In a Tube of 50) (Exc. Vat)
BD 129.360
BD 2.587 Each (In a Tube of 50) (inc. VAT)
50
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| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 2.352 | BD 117.600 |
| 100+ | BD 2.236 | BD 111.825 |
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.12mm
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products