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STMicroelectronics N-Channel MOSFET, 400 mA, 600 V, 3-Pin SOT-223 STN1HNK60

RS Stock No.: 687-5131Brand: STMicroelectronicsManufacturers Part No.: STN1HNK60
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.25V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

7 nC @ 10 V

Transistor Material

Si

Width

3.5mm

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Height

1.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 4.095

BD 0.410 Each (In a Pack of 10) (Exc. Vat)

BD 4.505

BD 0.451 Each (In a Pack of 10) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 400 mA, 600 V, 3-Pin SOT-223 STN1HNK60
Select packaging type

BD 4.095

BD 0.410 Each (In a Pack of 10) (Exc. Vat)

BD 4.505

BD 0.451 Each (In a Pack of 10) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 400 mA, 600 V, 3-Pin SOT-223 STN1HNK60
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 20BD 0.410BD 4.095
30 - 90BD 0.388BD 3.885
100 - 490BD 0.294BD 2.940
500 - 990BD 0.257BD 2.572
1000+BD 0.210BD 2.100

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.25V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

7 nC @ 10 V

Transistor Material

Si

Width

3.5mm

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Height

1.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more