Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 SiSS02DN-T1-GE3
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China
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BD 8.690
BD 0.869 Each (In a Pack of 10) (Exc. Vat)
BD 9.559
BD 0.956 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 8.690
BD 0.869 Each (In a Pack of 10) (Exc. Vat)
BD 9.559
BD 0.956 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products