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Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1

RS Stock No.: 262-5857Brand: InfineonManufacturers Part No.: IPB023N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 4.180

BD 0.836 Each (In a Pack of 5) (Exc. Vat)

BD 4.598

BD 0.920 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.180
10BD 8.360
15BD 12.540
20BD 16.720
25BD 20.900
30BD 25.080
35BD 29.260
40BD 33.440
45BD 37.620
50BD 37.125
55BD 40.838
60BD 44.550
65BD 48.262
70BD 51.975
75BD 55.688

BD 4.180

BD 0.836 Each (In a Pack of 5) (Exc. Vat)

BD 4.598

BD 0.920 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.180
10BD 8.360
15BD 12.540
20BD 16.720
25BD 20.900
30BD 25.080
35BD 29.260
40BD 33.440
45BD 37.620
50BD 37.125
55BD 40.838
60BD 44.550
65BD 48.262
70BD 51.975
75BD 55.688

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45BD 0.836BD 4.180
50 - 120BD 0.742BD 3.712
125 - 245BD 0.698BD 3.492
250 - 495BD 0.666BD 3.328
500+BD 0.627BD 3.135

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more