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Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1

RS Stock No.: 262-5859Brand: InfineonManufacturers Part No.: IPB029N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 4.016

BD 0.803 Each (In a Pack of 5) (Exc. Vat)

BD 4.418

BD 0.883 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.016
10BD 8.032
15BD 12.049
20BD 16.065
25BD 20.081
30BD 24.098
35BD 28.114
40BD 32.130
45BD 36.146
50BD 36.488
55BD 40.136
60BD 43.785
65BD 47.434
70BD 51.082
75BD 54.731

BD 4.016

BD 0.803 Each (In a Pack of 5) (Exc. Vat)

BD 4.418

BD 0.883 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.016
10BD 8.032
15BD 12.049
20BD 16.065
25BD 20.081
30BD 24.098
35BD 28.114
40BD 32.130
45BD 36.146
50BD 36.488
55BD 40.136
60BD 43.785
65BD 47.434
70BD 51.082
75BD 54.731

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45BD 0.803BD 4.016
50 - 120BD 0.730BD 3.649
125 - 245BD 0.688BD 3.439
250 - 495BD 0.651BD 3.255
500+BD 0.609BD 3.045

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more