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Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1

RS Stock No.: 262-5865Brand: InfineonManufacturers Part No.: IPD029N04NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 2.284

BD 0.457 Each (In a Pack of 5) (Exc. Vat)

BD 2.512

BD 0.503 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Select packaging type

BD 2.284

BD 0.457 Each (In a Pack of 5) (Exc. Vat)

BD 2.512

BD 0.503 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 45BD 0.457BD 2.284
50 - 120BD 0.410BD 2.048
125 - 245BD 0.383BD 1.916
250 - 495BD 0.362BD 1.811
500+BD 0.189BD 0.945

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more