Infineon SIPMOS® P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK SPD30P06PGBTMA1
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
6.22mm
Transistor Material
Si
Forward Diode Voltage
1.7V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 5.665
BD 0.566 Each (In a Pack of 10) (Exc. Vat)
BD 6.231
BD 0.623 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 5.665
BD 0.566 Each (In a Pack of 10) (Exc. Vat)
BD 6.231
BD 0.623 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.566 | BD 5.665 |
| 50 - 240 | BD 0.534 | BD 5.335 |
| 250 - 490 | BD 0.451 | BD 4.510 |
| 500 - 1240 | BD 0.402 | BD 4.015 |
| 1250+ | BD 0.324 | BD 3.245 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
6.22mm
Transistor Material
Si
Forward Diode Voltage
1.7V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products