Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2390000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si
BD 231.000
BD 0.077 Each (On a Reel of 3000) (Exc. Vat)
BD 254.100
BD 0.085 Each (On a Reel of 3000) (inc. VAT)
3000
BD 231.000
BD 0.077 Each (On a Reel of 3000) (Exc. Vat)
BD 254.100
BD 0.085 Each (On a Reel of 3000) (inc. VAT)
3000
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2390000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si