Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
BD 5.802
BD 1.160 Each (In a Pack of 5) (Exc. Vat)
BD 6.382
BD 1.276 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 5.802
BD 1.160 Each (In a Pack of 5) (Exc. Vat)
BD 6.382
BD 1.276 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.160 | BD 5.802 |
25 - 45 | BD 0.935 | BD 4.675 |
50 - 120 | BD 0.852 | BD 4.262 |
125 - 245 | BD 0.798 | BD 3.988 |
250+ | BD 0.726 | BD 3.630 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.1mm
Country of Origin
China
Product details