Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
24 nC @ 8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 3.850
BD 0.192 Each (In a Pack of 20) (Exc. Vat)
BD 4.235
BD 0.211 Each (In a Pack of 20) (inc. VAT)
Standard
20
BD 3.850
BD 0.192 Each (In a Pack of 20) (Exc. Vat)
BD 4.235
BD 0.211 Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | BD 0.192 | BD 3.850 |
200 - 480 | BD 0.143 | BD 2.860 |
500 - 980 | BD 0.121 | BD 2.420 |
1000 - 1980 | BD 0.110 | BD 2.200 |
2000+ | BD 0.082 | BD 1.650 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
24 nC @ 8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details