Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Transistor Material
Si
Width
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 6.435
BD 0.644 Each (In a Pack of 10) (Exc. Vat)
BD 7.079
BD 0.708 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 6.435
BD 0.644 Each (In a Pack of 10) (Exc. Vat)
BD 7.079
BD 0.708 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.644 | BD 6.435 |
50 - 90 | BD 0.605 | BD 6.050 |
100 - 240 | BD 0.544 | BD 5.445 |
250 - 490 | BD 0.517 | BD 5.170 |
500+ | BD 0.490 | BD 4.895 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Transistor Material
Si
Width
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details