Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
3 kW
Package Type
M153
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
108 x 62 x 36mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
IGBT Modules 1-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
HH Series, Planar-NPT High-Speed Chooper IGBTs
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 58.250
Each (In a Box of 10) (Exc. Vat)
BD 64.075
Each (In a Box of 10) (Including VAT)
10
BD 58.250
Each (In a Box of 10) (Exc. Vat)
BD 64.075
Each (In a Box of 10) (Including VAT)
10
Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
3 kW
Package Type
M153
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
108 x 62 x 36mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
IGBT Modules 1-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
HH Series, Planar-NPT High-Speed Chooper IGBTs
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.