Infineon IFF450B12ME4PB11BPSA1 Dual IGBT Module, 450 A 1200 V ECONOD
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
450 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
ECONOD
Configuration
Dual
Channel Type
N
Transistor Configuration
Dual
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BD 545.523
BD 90.920 Each (In a Tray of 6) (Exc. Vat)
BD 600.075
BD 100.012 Each (In a Tray of 6) (inc. VAT)
6
BD 545.523
BD 90.920 Each (In a Tray of 6) (Exc. Vat)
BD 600.075
BD 100.012 Each (In a Tray of 6) (inc. VAT)
6
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
450 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
ECONOD
Configuration
Dual
Channel Type
N
Transistor Configuration
Dual
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products