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Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1

RS Stock No.: 262-5848Brand: InfineonManufacturers Part No.: IPB013N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 0.895

Each (In a Pack of 2) (Exc. Vat)

BD 0.985

Each (In a Pack of 2) (inc. VAT)

Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 1.790
4BD 3.580
6BD 5.370
8BD 7.160
10BD 8.950
12BD 10.740
14BD 12.530
16BD 14.320
18BD 16.110
20BD 17.900
22BD 19.690
24BD 21.480
26BD 23.270
28BD 25.060
30BD 26.850

BD 0.895

Each (In a Pack of 2) (Exc. Vat)

BD 0.985

Each (In a Pack of 2) (inc. VAT)

Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 1.790
4BD 3.580
6BD 5.370
8BD 7.160
10BD 8.950
12BD 10.740
14BD 12.530
16BD 14.320
18BD 16.110
20BD 17.900
22BD 19.690
24BD 21.480
26BD 23.270
28BD 25.060
30BD 26.850

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more