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Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1

RS Stock No.: 262-5855PBrand: InfineonManufacturers Part No.: IPB018N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

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BD 0.860

Each (Supplied on a Reel) (Exc. Vat)

BD 0.946

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.300
10BD 8.600
15BD 12.900
20BD 17.200
25BD 19.375
30BD 23.250
35BD 27.125
40BD 31.000
45BD 34.875
50BD 36.500
55BD 40.150
60BD 43.800
65BD 47.450
70BD 51.100
75BD 54.750

BD 0.860

Each (Supplied on a Reel) (Exc. Vat)

BD 0.946

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.300
10BD 8.600
15BD 12.900
20BD 17.200
25BD 19.375
30BD 23.250
35BD 27.125
40BD 31.000
45BD 34.875
50BD 36.500
55BD 40.150
60BD 43.800
65BD 47.450
70BD 51.100
75BD 54.750

Buy in bulk

quantityUnit pricePer Reel
5 - 20BD 0.860BD 4.300
25 - 45BD 0.775BD 3.875
50 - 120BD 0.730BD 3.650
125 - 245BD 0.690BD 3.450
250+BD 0.645BD 3.225

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more