Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1

RS Stock No.: 262-5857Brand: InfineonManufacturers Part No.: IPB023N04NF2SATMA1
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Technical Document

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BD 0.760

Each (In a Pack of 5) (Exc. Vat)

BD 0.836

Each (In a Pack of 5) (Including VAT)

Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.800
10BD 7.600
15BD 11.400
20BD 15.200
25BD 19.000
30BD 22.800
35BD 26.600
40BD 30.400
45BD 34.200
50BD 33.750
55BD 37.125
60BD 40.500
65BD 43.875
70BD 47.250
75BD 50.625

BD 0.760

Each (In a Pack of 5) (Exc. Vat)

BD 0.836

Each (In a Pack of 5) (Including VAT)

Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.800
10BD 7.600
15BD 11.400
20BD 15.200
25BD 19.000
30BD 22.800
35BD 26.600
40BD 30.400
45BD 34.200
50BD 33.750
55BD 37.125
60BD 40.500
65BD 43.875
70BD 47.250
75BD 50.625

Buy in bulk

quantityUnit pricePer Pack
5 - 45BD 0.760BD 3.800
50 - 120BD 0.675BD 3.375
125 - 245BD 0.630BD 3.150
250 - 495BD 0.595BD 2.975
500+BD 0.550BD 2.750

Technical Document