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Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1

RS Stock No.: 262-5859PBrand: InfineonManufacturers Part No.: IPB029N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 0.695

Each (Supplied on a Reel) (Exc. Vat)

BD 0.765

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 34.750
55BD 38.225
60BD 41.700
65BD 45.175
70BD 48.650
75BD 52.125
80BD 55.600
85BD 59.075
90BD 62.550
50BD 34.750
55BD 38.225
60BD 41.700
65BD 45.175
70BD 48.650
75BD 52.125

BD 0.695

Each (Supplied on a Reel) (Exc. Vat)

BD 0.765

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 34.750
55BD 38.225
60BD 41.700
65BD 45.175
70BD 48.650
75BD 52.125
80BD 55.600
85BD 59.075
90BD 62.550
50BD 34.750
55BD 38.225
60BD 41.700
65BD 45.175
70BD 48.650
75BD 52.125

Buy in bulk

quantityUnit pricePer Reel
50 - 120BD 0.695BD 3.475
125 - 245BD 0.660BD 3.300
250 - 495BD 0.625BD 3.125
500+BD 0.585BD 2.925

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more