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N-Channel MOSFET, 50 A, 120 V, 3-Pin D2PAK Infineon IPB50N12S3L15ATMA1

RS Stock No.: 214-9022Brand: InfineonManufacturers Part No.: IPB50N12S3L15ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0154 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

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BD 0.790

Each (In a Pack of 10) (Exc. Vat)

BD 0.869

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 50 A, 120 V, 3-Pin D2PAK Infineon IPB50N12S3L15ATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 7.900
20BD 15.800
30BD 23.700
40BD 31.600
50BD 37.500
60BD 45.000
70BD 52.500
80BD 60.000
90BD 67.500
100BD 68.000
110BD 74.800
120BD 81.600
130BD 88.400
140BD 95.200
150BD 102.000

BD 0.790

Each (In a Pack of 10) (Exc. Vat)

BD 0.869

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 50 A, 120 V, 3-Pin D2PAK Infineon IPB50N12S3L15ATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 7.900
20BD 15.800
30BD 23.700
40BD 31.600
50BD 37.500
60BD 45.000
70BD 52.500
80BD 60.000
90BD 67.500
100BD 68.000
110BD 74.800
120BD 81.600
130BD 88.400
140BD 95.200
150BD 102.000

Buy in bulk

quantityUnit pricePer Pack
10 - 40BD 0.790BD 7.900
50 - 90BD 0.750BD 7.500
100 - 240BD 0.680BD 6.800
250 - 490BD 0.625BD 6.250
500+BD 0.605BD 6.050

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0154 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more