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Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1

RS Stock No.: 262-5867Brand: InfineonManufacturers Part No.: IPD038N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 0.330

Each (In a Pack of 10) (Exc. Vat)

BD 0.363

Each (In a Pack of 10) (inc. VAT)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 3.300
20BD 6.600
30BD 9.900
40BD 13.200
50BD 16.500
60BD 19.800
70BD 23.100
80BD 26.400
90BD 29.700
100BD 31.500
110BD 34.650
120BD 37.800
130BD 40.950
140BD 44.100
150BD 47.250

BD 0.330

Each (In a Pack of 10) (Exc. Vat)

BD 0.363

Each (In a Pack of 10) (inc. VAT)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 3.300
20BD 6.600
30BD 9.900
40BD 13.200
50BD 16.500
60BD 19.800
70BD 23.100
80BD 26.400
90BD 29.700
100BD 31.500
110BD 34.650
120BD 37.800
130BD 40.950
140BD 44.100
150BD 47.250

Buy in bulk

quantityUnit pricePer Pack
10 - 90BD 0.330BD 3.300
100 - 240BD 0.315BD 3.150
250 - 490BD 0.310BD 3.100
500 - 990BD 0.300BD 3.000
1000+BD 0.195BD 1.950

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more