Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0092 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
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BD 18.750
BD 0.375 Each (In a Tube of 50) (Exc. Vat)
BD 20.625
BD 0.413 Each (In a Tube of 50) (inc. VAT)
50
BD 18.750
BD 0.375 Each (In a Tube of 50) (Exc. Vat)
BD 20.625
BD 0.413 Each (In a Tube of 50) (inc. VAT)
50
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0092 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si