Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
115 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
185 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.2mm
Width
25.07mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.6mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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BD 15.300
BD 15.300 Each (Exc. Vat)
BD 16.830
BD 16.830 Each (inc. VAT)
Standard
1
BD 15.300
BD 15.300 Each (Exc. Vat)
BD 16.830
BD 16.830 Each (inc. VAT)
Standard
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 1 | BD 15.300 |
2 - 4 | BD 14.995 |
5+ | BD 14.700 |
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
115 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
185 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.2mm
Width
25.07mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.6mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS