Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
11.04 x 7.74 x 2.66mm
Maximum Operating Temperature
+150 °C
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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BD 0.145
Each (In a Box of 500) (Exc. Vat)
BD 0.159
Each (In a Box of 500) (Including VAT)
500
BD 0.145
Each (In a Box of 500) (Exc. Vat)
BD 0.159
Each (In a Box of 500) (Including VAT)
500
Buy in bulk
quantity | Unit price | Per Box |
---|---|---|
500 - 500 | BD 0.145 | BD 72.500 |
1000+ | BD 0.120 | BD 60.000 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
11.04 x 7.74 x 2.66mm
Maximum Operating Temperature
+150 °C
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.