N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
220 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.92mm
Width
1.3mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.7 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
0.93mm
Country of Origin
China
Product details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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BD 0.105
Each (Supplied on a Reel) (Exc. Vat)
BD 0.115
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
BD 0.105
Each (Supplied on a Reel) (Exc. Vat)
BD 0.115
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 10 - 90 | BD 0.105 | BD 1.050 |
| 100 - 240 | BD 0.095 | BD 0.950 |
| 250 - 490 | BD 0.085 | BD 0.850 |
| 500 - 990 | BD 0.075 | BD 0.750 |
| 1000+ | BD 0.070 | BD 0.700 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
220 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.92mm
Width
1.3mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.7 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
0.93mm
Country of Origin
China
Product details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products