Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5.85mm
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.530
Each (In a Pack of 25) (Exc. Vat)
BD 0.583
Each (In a Pack of 25) (Including VAT)
25
BD 0.530
Each (In a Pack of 25) (Exc. Vat)
BD 0.583
Each (In a Pack of 25) (Including VAT)
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | BD 0.530 | BD 13.250 |
100 - 475 | BD 0.420 | BD 10.500 |
500 - 975 | BD 0.355 | BD 8.875 |
1000 - 2975 | BD 0.290 | BD 7.250 |
3000+ | BD 0.285 | BD 7.125 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5.85mm
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Product details