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onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 181-1864Brand: onsemiManufacturers Part No.: FGH75T65SQDNL4
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China

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BD 2.415

Each (In a Tube of 450) (Exc. Vat)

BD 2.657

Each (In a Tube of 450) (inc. VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

450

Available in multiples of 450
450BD 1,086.750
900BD 2,173.500
1350BD 3,260.250
1800BD 4,347.000
2250BD 5,433.750
2700BD 6,520.500
3150BD 7,607.250
3600BD 8,694.000
4050BD 9,780.750
4500BD 10,867.500
4950BD 11,954.250
5400BD 13,041.000
5850BD 14,127.750
6300BD 15,214.500
6750BD 16,301.250

BD 2.415

Each (In a Tube of 450) (Exc. Vat)

BD 2.657

Each (In a Tube of 450) (inc. VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.

450

Available in multiples of 450
450BD 1,086.750
900BD 2,173.500
1350BD 3,260.250
1800BD 4,347.000
2250BD 5,433.750
2700BD 6,520.500
3150BD 7,607.250
3600BD 8,694.000
4050BD 9,780.750
4500BD 10,867.500
4950BD 11,954.250
5400BD 13,041.000
5850BD 14,127.750
6300BD 15,214.500
6750BD 16,301.250

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more