Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 0.065
Each (In a Pack of 50) (Exc. Vat)
BD 0.071
Each (In a Pack of 50) (Including VAT)
50
BD 0.065
Each (In a Pack of 50) (Exc. Vat)
BD 0.071
Each (In a Pack of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 50 | BD 0.065 | BD 3.250 |
100 - 200 | BD 0.035 | BD 1.750 |
250 - 450 | BD 0.035 | BD 1.750 |
500 - 950 | BD 0.035 | BD 1.750 |
1000+ | BD 0.030 | BD 1.500 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.