Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
75
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.8 x 5 x 20.1mm
Country of Origin
Korea, Republic Of
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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BD 0.890
Each (In a Tube of 30) (Exc. Vat)
BD 0.979
Each (In a Tube of 30) (Including VAT)
30
BD 0.890
Each (In a Tube of 30) (Exc. Vat)
BD 0.979
Each (In a Tube of 30) (Including VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | BD 0.890 | BD 26.700 |
120 - 480 | BD 0.765 | BD 22.950 |
510 - 990 | BD 0.680 | BD 20.400 |
1020+ | BD 0.585 | BD 17.550 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
75
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.8 x 5 x 20.1mm
Country of Origin
Korea, Republic Of
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.