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SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S

RS Stock No.: 233-6854Brand: onsemiManufacturers Part No.: NTH4L022N120M3S
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4L

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Maximum Gate Threshold Voltage

4.4V

Number of Elements per Chip

1

Transistor Material

SiC

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BD 5.665

BD 5.665 Each (Exc. Vat)

BD 6.231

BD 6.231 Each (inc. VAT)

SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 5.665
2BD 11.330
3BD 16.995
4BD 22.660
5BD 28.325
6BD 33.990
7BD 39.655
8BD 45.320
9BD 50.985
10BD 56.650
11BD 62.315
12BD 67.980
13BD 73.645
14BD 79.310
15BD 84.975

BD 5.665

BD 5.665 Each (Exc. Vat)

BD 6.231

BD 6.231 Each (inc. VAT)

SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 5.665
2BD 11.330
3BD 16.995
4BD 22.660
5BD 28.325
6BD 33.990
7BD 39.655
8BD 45.320
9BD 50.985
10BD 56.650
11BD 62.315
12BD 67.980
13BD 73.645
14BD 79.310
15BD 84.975

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4L

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Maximum Gate Threshold Voltage

4.4V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more