Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Length
6.1mm
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.05mm
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BD 0.255
Each (On a Reel of 1500) (Exc. Vat)
BD 0.281
Each (On a Reel of 1500) (Including VAT)
1500
BD 0.255
Each (On a Reel of 1500) (Exc. Vat)
BD 0.281
Each (On a Reel of 1500) (Including VAT)
1500
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Length
6.1mm
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.05mm