STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
167 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Pin Count
3
Country of Origin
China
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BD 5.445
BD 1.089 Each (In a Pack of 5) (Exc. Vat)
BD 5.989
BD 1.198 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 5.445
BD 1.089 Each (In a Pack of 5) (Exc. Vat)
BD 5.989
BD 1.198 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 1.089 | BD 5.445 |
| 50 - 95 | BD 1.040 | BD 5.198 |
| 100 - 245 | BD 0.864 | BD 4.318 |
| 250 - 495 | BD 0.742 | BD 3.712 |
| 500+ | BD 0.676 | BD 3.382 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
167 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Pin Count
3
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products