Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 18.975
BD 0.380 Each (In a Tube of 50) (Exc. Vat)
BD 20.873
BD 0.418 Each (In a Tube of 50) (inc. VAT)
50
BD 18.975
BD 0.380 Each (In a Tube of 50) (Exc. Vat)
BD 20.873
BD 0.418 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.380 | BD 18.975 |
100 - 450 | BD 0.292 | BD 14.575 |
500 - 950 | BD 0.253 | BD 12.650 |
1000 - 4950 | BD 0.209 | BD 10.450 |
5000+ | BD 0.192 | BD 9.625 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details