STMicroelectronics ST SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STWA70N65DM6
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
650 V
Series
ST
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.036 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Number of Elements per Chip
1
Transistor Material
SiC
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BD 149.325
BD 4.978 Each (In a Tube of 30) (Exc. Vat)
BD 164.257
BD 5.476 Each (In a Tube of 30) (inc. VAT)
30
BD 149.325
BD 4.978 Each (In a Tube of 30) (Exc. Vat)
BD 164.257
BD 5.476 Each (In a Tube of 30) (inc. VAT)
30
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
650 V
Series
ST
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.036 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products