Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.8mm
Typical Gate Charge @ Vgs
2.9 nC @ 4.5 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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BD 0.180
Each (On a Reel of 2500) (Exc. Vat)
BD 0.198
Each (On a Reel of 2500) (inc. VAT)
2500
BD 0.180
Each (On a Reel of 2500) (Exc. Vat)
BD 0.198
Each (On a Reel of 2500) (inc. VAT)
2500
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.8mm
Typical Gate Charge @ Vgs
2.9 nC @ 4.5 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details