Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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BD 0.870
Each (In a Pack of 5) (Exc. Vat)
BD 0.957
Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 0.870
Each (In a Pack of 5) (Exc. Vat)
BD 0.957
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.870 | BD 4.350 |
50 - 95 | BD 0.695 | BD 3.475 |
100+ | BD 0.560 | BD 2.800 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details