Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.5 x 26 x 5.2mm
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
BD 6.510
BD 1.302 Each (In a Pack of 5) (Exc. Vat)
BD 7.161
BD 1.432 Each (In a Pack of 5) (inc. VAT)
5
BD 6.510
BD 1.302 Each (In a Pack of 5) (Exc. Vat)
BD 7.161
BD 1.432 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.302 | BD 6.510 |
25 - 45 | BD 1.166 | BD 5.828 |
50 - 95 | BD 1.150 | BD 5.749 |
100 - 245 | BD 1.139 | BD 5.696 |
250+ | BD 1.129 | BD 5.644 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.5 x 26 x 5.2mm
Country of Origin
China
Product details