Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.1mm
Forward Diode Voltage
1.2V
Height
0.85mm
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BD 0.165
Each (On a Reel of 5000) (Exc. Vat)
BD 0.181
Each (On a Reel of 5000) (Including VAT)
5000
BD 0.165
Each (On a Reel of 5000) (Exc. Vat)
BD 0.181
Each (On a Reel of 5000) (Including VAT)
5000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5000 - 5000 | BD 0.165 | BD 825.000 |
10000+ | BD 0.150 | BD 750.000 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.1mm
Forward Diode Voltage
1.2V
Height
0.85mm