Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
You may be interested in
Semikron Danfoss SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 VBrand: Semikron Danfoss
BD 153.325Each (In a Box of 12) (Exc. Vat)
BD 173.530
BD 173.530 Each (Exc. Vat)
BD 190.883
BD 190.883 Each (inc. VAT)
Semikron Danfoss SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 V
Select packaging type
Standard
1
BD 173.530
BD 173.530 Each (Exc. Vat)
BD 190.883
BD 190.883 Each (inc. VAT)
Semikron Danfoss SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Quantity | Unit price |
---|---|
1 - 1 | BD 173.530 |
2 - 3 | BD 156.178 |
4 - 5 | BD 141.080 |
6 - 7 | BD 129.024 |
8+ | BD 117.964 |
You may be interested in
Semikron Danfoss SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 VBrand: Semikron Danfoss
BD 153.325Each (In a Box of 12) (Exc. Vat)
Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
You may be interested in
Semikron Danfoss SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 VBrand: Semikron Danfoss
BD 153.325Each (In a Box of 12) (Exc. Vat)