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Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

RS Stock No.: 253-3509Brand: BournsManufacturers Part No.: BIDW50N65T
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Technical Document

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode

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Stock information temporarily unavailable.

BD 3.602

BD 1.801 Each (In a Pack of 2) (Exc. Vat)

BD 3.962

BD 1.981 Each (In a Pack of 2) (inc. VAT)

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Select packaging type

BD 3.602

BD 1.801 Each (In a Pack of 2) (Exc. Vat)

BD 3.962

BD 1.981 Each (In a Pack of 2) (inc. VAT)

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
2 - 8BD 1.801BD 3.602
10 - 48BD 1.622BD 3.244
50 - 98BD 1.554BD 3.108
100 - 248BD 1.381BD 2.762
250+BD 1.370BD 2.740

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Technical Document

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more