Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Height
0.8mm
Series
DMC3016LDV
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Stock information temporarily unavailable.
Please check again later.
BD 0.325
Each (In a Pack of 20) (Exc. Vat)
BD 0.357
Each (In a Pack of 20) (Including VAT)
20
BD 0.325
Each (In a Pack of 20) (Exc. Vat)
BD 0.357
Each (In a Pack of 20) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 80 | BD 0.325 | BD 6.500 |
100 - 480 | BD 0.285 | BD 5.700 |
500 - 980 | BD 0.275 | BD 5.500 |
1000 - 1980 | BD 0.270 | BD 5.400 |
2000+ | BD 0.265 | BD 5.300 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Height
0.8mm
Series
DMC3016LDV
Minimum Operating Temperature
-55 °C
Product details